MNG Law Office Announces Paid Long-Term Assessment Internship Opportunity
MNG Law Office, under the guidance of Advocate Nitin Goel, is offering an excellent opportunity for law students and recent graduates seeking practical legal experience. The firm is looking to hire two dedicated Assessment Interns for its office located in Pitampura, Rohini, Delhi.
The internship is designed to provide aspiring legal professionals with hands-on experience in various aspects of litigation and legal research. Successful candidates will assist attorneys with legal research and drafting assignments, offering a unique insight into the day-to-day functioning of a law office.
Key Responsibilities
- Conduct detailed legal research and prepare comprehensive writing assignments.
- Draft various legal documents, including motions, pleadings, writs, and briefs.
- Review and summarize case law and legal articles relevant to ongoing cases.
Eligibility Criteria
Candidates must possess excellent written and verbal communication skills and demonstrate proficiency in legal research tools and methods. A commitment to join immediately is a prerequisite.
Internship Details
Duration: A minimum of three months, with the potential for extension based on performance.
Office Hours: 10:00 AM to 7:00 PM, Monday to Saturday.
Stipend: Performance-based remuneration will be provided.
This opportunity is ideal for candidates seeking a long-term commitment and exposure to real-world legal practice. Interns will work closely with experienced attorneys, gaining invaluable experience in legal documentation, research, and case preparation.
Application Process
Interested candidates are invited to apply by sending their updated CV and a cover letter to varchaswadubey99@gmail.com. Applications will be considered on a rolling basis, and early submissions are encouraged to secure a position.
For those passionate about pursuing a career in litigation and corporate law, this internship offers a platform to refine their skills and gain significant exposure to the legal field.
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